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10W-200W Green Picosecond Laser

  • Wavelength: 532nm
  • Pulse Repetition Rate Range: 100kHz - 2MHz
  • Pulse Width<15ps(at 1064nm)
  • Average Power: 10W-200W
  • Average Power Stability: <1%RMS over 8 hours
  • Pulse-to-Pulse Stability: <2%RMS
  • Spatial Mode: TEM00(M² <1.2)
  • Beam Divergence Full Angle: < 1.0mrad
  • 1/e² Beam Diameter: 2.4±0.2mm

Technical Parameters

MODEL GXP 532-10 GXP 532-20S GXP 532-30S GXP 532-40S GXP 532-60S GXP 532-100S GXP 532-150S GXP 532-200S
Wavelength 532nm
Pulse Repetition Rate Range 50kHz – 2MHz 100kHz – 2MHz
Pulse Width <15ps(at 1064nm)
Average Power >10W >20W >30W >40W >60W >100W >150W >200W
Average Power Stability <1%RMS over 8 hours
Pulse-to-Pulse Stability <2%RMS
Spatial Mode TEM₀₀(M² <1.2)
Beam Divergence Full Angle < 1.0mrad
1/e² Beam Diameter 2.0±0.2mm 2.2±0.2mm 2.4±0.2mm
Beam Roundness >90%
Beam Pointing Stability <50urad
Polarization Direction Vertical
Polarization Ratio 100:1
Operating Voltage 100-240VAC
Cooling Water-cooling

Application

Product Description

532 nm Green Picosecond Solid-State Laser

 

Introduction

The 532 nm green picosecond solid‑state laser is a class of diode‑pumped solid‑state laser (DPSS) that generates ultrashort pulses at a visible green wavelength. It relies on a crystalline gain medium—typically neodymium‑doped yttrium aluminum garnet (Nd:YAG) or neodymium‑doped yttrium orthovanadate (Nd:YVO₄)—whose fundamental infrared emission at 1064 nm is frequency‑doubled to 532 nm via a nonlinear optical crystal (e.g., LBO, KTP, or BBO). The picosecond pulse duration is achieved by active or passive mode‑locking techniques.

As a solid‑state laser, this system offers the inherent advantages of crystalline gain media: high peak power, excellent beam quality (M² < 1.2), robustness, and compactness. It occupies a central position in precision industrial processing, aesthetic dermatology, and advanced scientific research.

Working Principle (Solid‑State Specific)

  1. Energy storage: Laser diodes pump the Nd:YAG or Nd:YVO₄ crystal, exciting Nd³⁺ ions to the upper laser level. The relatively long fluorescence lifetime (≈230 µs for Nd:YAG) enables energy storage.

  2. Mode‑locking: A SESAM or other saturable absorber inside the resonator forces the laser to operate in a mode‑locked regime, generating a train of picosecond pulses at the cavity round‑trip frequency (typically 50–100 MHz).

  3. Amplification & pulse picking: The mode‑locked train can be seeded into a regenerative amplifier or multi‑pass amplifier (all solid‑state) to boost pulse energy. A Pockels cell pulse picker reduces the repetition rate to the desired level (kHz to MHz).

  4. Second harmonic generation (SHG): The amplified 1064 nm picosecond pulses pass through a nonlinear crystal (type‑I or type‑II phase‑matched LBO or KTP), converting ≈50–70% of the infrared energy to 532 nm green light.

Because the entire chain (oscillator, amplifier, harmonic converter) uses bulk crystals and free‑space optics, this system achieves superior pulse contrast and temporal purity compared to some fiber‑based alternatives.

Advantages of the Solid‑State Design for 532 nm Picosecond Lasers

  • High pulse energy: Bulk crystals readily support pulse energies >100 µJ at 532 nm, ideal for materials that require strong photomechanical disruption (e.g., tattoo ink, sapphire, ceramics).

  • Excellent beam quality: Solid‑state resonators can be designed for fundamental transverse mode (TEM₀₀) operation with M² < 1.2, yielding a tiny, symmetric focal spot for micron‑scale precision.

  • Short pulse duration with high peak power: The solid‑state gain medium’s broad emission bandwidth (particularly Nd:YVO₄) supports pulses as short as 7–10 ps, producing peak powers in the megawatt range.

  • Wavelength flexibility: The same solid‑state platform can be frequency‑tripled (355 nm) or quadrupled (266 nm) simply by adding additional harmonic crystals, offering a complete palette of UV to green wavelengths.

  • Robust industrial reliability: Modern conduction‑cooled or water‑cooled solid‑state laser heads are sealed, dust‑proof, and designed for 24/7 operation in foundries or cleanrooms.

Applications of 532 nm Green Picosecond Solid‑State Lasers

Industrial Micromachining

  • Semiconductors: Non‑carbonized cutting of polyimide (PI) films, low‑temperature co‑fired ceramic (LTCC) drilling, wafer scribing.

  • Flat panel displays: OLED and flexible printed circuit (FPC) cutting with minimal heat‑affected zone.

  • Solar cells: Edge isolation, via drilling, and scribing of thin‑film photovoltaic layers.

  • Precision mechanical parts: Micro‑drilling of sapphire, ceramics, and hardened steel.

Because the 532 nm wavelength is strongly absorbed by many metals and dielectrics, yet offers better transmission through air and optics than UV, it strikes an ideal balance for high‑speed, high‑precision processing.

Aesthetic & Medical Dermatology

  • Tattoo removal: Particularly effective for red, orange, yellow, and brown pigments (Fitzpatrick skin types I–III).

  • Pigmented lesions: Lentigines, café‑au‑lait spots, freckles, and nevus of Ota.

  • Vascular lesions: Spider veins and port‑wine stains due to absorption by hemoglobin.

  • Skin rejuvenation: The photoacoustic effect stimulates collagen remodeling without thermal damage.

The solid‑state picosecond platform delivers the high pulse energy needed to mechanically shatter pigment granules with fewer treatment sessions compared to nanosecond lasers.

Scientific Research

  • Time‑resolved spectroscopy: Pump‑probe experiments and transient absorption.

  • Nonlinear microscopy: Second‑harmonic generation (SHG) and coherent anti‑Stokes Raman scattering (CARS) imaging.

  • Ultrafast material science: Studying carrier dynamics in semiconductors and 2D materials.

  • Micro‑surgery of biological specimens: Laser nanosurgery and optical transfection.

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