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100mW-400mW 266nm Nanosecond Laser

 
  • Average Power 100 mW -400 mW
  • Pulse Width < 1ns@1kHz, 25±5@5kHz
  • Repetition Rate 1 Hz – 10 kHz,  5kHz – 10 kHz
  • Pulse Energy 40µJ – 400 µJ
  • Beam Quality M² < 1.2

Technical Parameters

MODEL Grace X 355-3 Grace X 355-5
Wavelength 355nm
Pulse Repetition Rate Range 30kHz to 150kHz
Pulse Width 13±2ns@30kHz  12±2ns@30kHz
Average Power >3W@30kHz >5W@30kHz
Average Power Stability <±3% over 24 hours
Pulse-to-Pulse Stability <3%rms
Spatial Mode TEM00(M2 <1.2)
Beam Divergence Full Angle < 2 mrad
1/e2 Beam Diameter 0.7±0.1mm
Beam Roundness >90%
 Beam Pointing Stability <50urad
 Polarization Direction Horizontal
Polarization Ratio 100:1
Size 375*175*125mm
Weight 7.7kg
Cooling Water/Air-cooling

Application

Grace X series 3W/5W UV nanosecond laser is applicable for 3D printing, atmospheric detection, biomedical treatment, marking on materials like PCB, glass and plastic.

Product Description

100 mW – 400 mW 266 nm Nanosecond Laser

Deep‑UV Pulsed Laser for High‑Precision Industrial and Scientific Applications

Compact, Air‑Cooled Deep‑UV Nanosecond Laser

Introducing our new 266 nm nanosecond laser series – a diode‑pumped solid‑state (DPSS) laser delivering stable, diffraction‑limited deep‑ultraviolet pulses with average output power from 100 mW to 400 mW. Designed for demanding micro‑machining, semiconductor inspection, and spectroscopy, this laser combines short pulse duration (<10 ns), high peak power, and outstanding beam quality (M² < 1.2) in a robust, air‑cooled package.

Key Benefits at a Glance

  • Deep‑UV Wavelength (266 nm) – Enables high‑resolution processing of transparent materials (glass, sapphire, quartz) and precise ablation with minimal heat‑affected zone.

  • Adjustable Power from 100 mW to 400 mW – Choose the exact power level for your application; field‑adjustable models available.

  • Short Nanosecond Pulses – Pulse width <10 ns (down to 1–2 ns options) provides extreme peak power for clean, reproducible material removal.

  • High Repetition Rate – Operates from single‑shot up to 50 kHz, giving you full control over throughput and per‑pulse energy.

  • Excellent Beam Quality – TEM₀₀ mode with M² < 1.2 ensures tight focusing and consistent spot size across the working area.

  • Long‑Term Stability – <3% power drift over 12 hours; pulse‑to‑pulse stability <3% RMS for reliable, repeatable results.

  • Compact, Air‑Cooled Design – No external chiller needed for most duty cycles; easy integration into OEM systems or benchtop setups.

Applications

  • Precision Micro‑machining – Laser drilling, scribing, and cutting of thin films, ceramics, glass, and silicon wafers.

  • Semiconductor & Electronics – Wafer defect inspection, laser lift‑off (GaN on sapphire), and memory repair.

  • Laser‑Induced Breakdown Spectroscopy (LIBS) – Elemental analysis of metals, plastics, and geological samples.

  • LIDAR & Remote Sensing – High‑repetition‑rate 266 nm pulses for atmospheric aerosol detection.

  • Medical Device Manufacturing – Micromachining of stents, catheters, and ophthalmic implants.

  • Scientific Research – Time‑resolved fluorescence, photoacoustic imaging, and deep‑UV Raman spectroscopy.

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