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1.5mJ/2mJ 355nm UV Nanosecond Laser

  • Repetition Rate: 6 kHz or 15 kHz
  • Pulse Energy 1.5 mJ, 2.0 mJ
  • Average Power: 15W-20W@10kHz
  • Pulse Width: 50±20ns, 120±20ns@10kHz
  • Beam Quality: M² < 1.3
  • Beam Diameter: 1.2±0.2mm

Technical Parameters

MODEL GS 355-10 GS 355-15
Wavelength  355nm
Pulse Repetition Rate Range  40kHz to 150kHz
Pulse Width  12ns±2@50kHz
Average Power  >10W@50kHz >15W@50kHz
Average Power Stability  <3%RMS over 8 hours
Pulse-to-Pulse Stability  <3%RMS
Spatial Mode  TEM00(M² <1.2)
Beam Divergence Full Angle  <2mrad
1/e² Beam Diameter  0.5±0.2mm
Beam Roundness  >90%
 Beam Pointing Stability  <50urad
 Polarization Direction  Horizontal
Polarization Ratio  100:1
Size  290*150*127mm
Weight  8.35kg
Cooling  Water-cooling

Application

Product Description

1.5 mJ / 2 mJ, 355 nm UV Nanosecond Laser

Product Overview

The 355 nm UV Nanosecond Laser is a diode‑pumped solid‑state (DPSS) laser delivering high‑energy UV pulses at 1.5 mJ or 2.0 mJ per pulse, with selectable repetition rates of 6 kHz and 15 kHz. This unique combination of millijoule‑level pulse energy and kilohertz repetition rates bridges the gap between low‑frequency, high‑energy lasers (e.g., 20–50 Hz) and high‑frequency, low‑energy lasers (e.g., >50 kHz). It is ideal for applications that demand both significant per‑pulse energy and moderate‑to‑high throughput, such as precision drilling, via hole formation, wafer scribing, thin‑film ablation, and laser‑induced breakdown spectroscopy (LIBS).

Built on an all‑solid‑state architecture with diode pumping and solid‑state harmonic generation, this laser offers exceptional beam quality, long‑term stability, and maintenance‑free operation – making it a reliable workhorse for 24/7 industrial environments and advanced research laboratories.

Key Features

  • High Pulse Energy – Choose the 1.5 mJ or 2.0 mJ model; both provide ample energy for efficient UV material processing.

  • 355 nm Deep‑UV Wavelength – Enables high‑resolution patterning, low heat‑affected zone, and strong absorption in semiconductors, glasses, polymers, and ceramics.

  • 6 kHz or 15 kHz Repetition Rate – Fixed or field‑selectable models available; allows optimization between higher pulse energy (6 kHz) or higher average power (15 kHz).

  • Nanosecond Pulse Width – < 15 ns (typical 10–12 ns), delivering high peak power for clean ablation and minimal thermal damage.

  • Exceptional Beam Quality – M² < 1.3, circular beam profile, high pointing stability, and near‑diffraction‑limited divergence.

  • All‑Solid‑State Architecture – Diode‑pumped Nd:YAG or Nd:YVO₄ oscillator with solid‑state harmonic conversion (LBO crystals). No flashlamps, no gas refills, no high‑voltage discharge.

  • Industrial Reliability – Sealed laser head, water‑cooled (or optional air‑cooled for lower power), >15,000 hours diode lifetime.

  • Flexible Control – External TTL triggering, internal clock, burst mode, RS‑232 / Ethernet interface, and pulse‑on‑demand capability.

Applications

Field Typical Processes
Electronics Manufacturing PCB via drilling, flex circuit cutting, ITO scribing, memory repair
Semiconductor Processing Wafer dicing, die marking, laser lift‑off (GaN on sapphire), edge trimming
Precision Micromachining Glass, sapphire, ceramic drilling and cutting; thin‑film ablation
Laser‑Induced Breakdown Spectroscopy (LIBS) High‑repetition‑rate elemental analysis of metals, glasses, plastics, geological samples
Display Industry OLED panel cutting, TFT array repair, glass edge deletion for LCD
Medical Device Manufacturing Catheter and stent hole drilling; surface structuring of implants
Scientific Research Time‑resolved fluorescence, photoacoustic imaging, pump‑probe spectroscopy, material damage studies

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